Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Abstract The role of the atomic interface in the resistive switching in Al–WO 3 –Al devices is investigated by inserting metallic graphene or insulating hexagonal BN sheet between the top Al electrode and WO 3 film. Clear reversible bipolar-type resistive switching phenomena were observed, regardless of the interface modification. However, endurance and retention properties were affected by the nature of the interface. While the device containing the graphene interface showed significantly improved performance, another device containing the hexagonal BN sheet showed degraded performance. These experimental findings suggest that atomic configuration of the electrode/oxide interface plays a key role in determining the resistive switching characteristics.