Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues
Source abstract
Abstract
Abstract The paper focuses on growth of GaN thin films via plasma assisted molecular beam epitaxy on SiC/Si(111) substrate formed by atom-by-atom substitution method. A comparison with GaN film grown in the same process directly on Si(111) substrate is performed. The films were studied by ellipsometry, electron diffraction and Raman spectroscopy. The results of these measurements are used to compare polarity of the films, crystalline properties, quality and residual elastic stresses in GaN films grown on Si and SiC/Si substrates. It is shown that SiC buffer layer has a positive effect on the structural quality of growing GaN thin films. It was found that use of SiC/Si(111) substrate leads to formation of N-polar film, whereas Ga-polar film is formed on Si(111).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire10.1016/j.jcrysgro.2009.10.029 ↗
2. GaN growth using GaN buffer layer10.1143/JJAP.30.L1705 ↗
3. Gil · 2013 · vol. 18
4. Investigations of 600-V GaN HEMT and GaN diode for power converter applications10.1109/TPEL.2013.2286639 ↗
5. GaN blue diode lasers: a spectroscopist's view10.1007/s003400050863 ↗
6. GaN-based modulation doped FETs and UV detectors10.1016/S0038-1101(01)00271-4 ↗
7. Substrates for epitaxy of gallium nitride: new materials and techniques
8. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer10.1063/1.96549 ↗
9. Growth of GaN film on 150mm Si (111) using multilayer AlN∕AlGaN buffer by metal-organic vapor phase epitaxy method10.1063/1.2818675 ↗
10. Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001)10.1063/1.123214 ↗
11. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC (0001)10.1016/j.tsf.2012.02.004 ↗
12. Semipolar gallium nitride on silicon: technology and properties
13. MOVPE growth of GaN on Si–substrates and strain10.1016/j.tsf.2006.07.100 ↗
14. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films10.1088/0022-3727/47/31/313001 ↗
15. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: a review10.1134/S1063783414080137 ↗
16. Epitaxial silicon carbide on a 6′ silicon wafer10.1134/S1063785014010088 ↗
17. Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O310.1063/1.363264 ↗
18. HVPE growth of GaN in the semipolar direction on planar Si (210)10.1002/pssc.201200566 ↗
19. Molecular beam epitaxy10.1016/S0039-6028(01)01525-4 ↗
20. Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy10.1063/1.120733 ↗
21. Features of molecular beam epitaxy of the GaN (0001) and GaN (000\bar 1) layers with the use of different methods of activation of nitrogen10.1134/S1063782609080181 ↗
22. Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides10.1134/S1063785007040189 ↗
23. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: a model of the formation of V-defects during the growth of GaN10.1134/S1063783415090218 ↗
24. Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate10.1016/j.tsf.2016.03.034 ↗
25. Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon10.1016/j.spmi.2017.07.050 ↗
26. Low temperature surface cleaning of silicon and its application to silicon MBE10.1149/1.2108651 ↗
27. Metal organic vapor phase epitaxy growth of (Al) GaN heterostructures on SiC/Si (111) templates synthesized by topochemical method of atoms substitution10.1002/pssa.201700190 ↗
28. Electron-microscopic investigation of a SiC/Si (111) structure obtained by solid phase epitaxy10.1134/S1063785008110278 ↗
29. Growth of GaN by ECR-assisted MBE10.1016/0921-4526(93)90213-P ↗
30. MBE growth of GaN and AlGaN layers on Si (111) substrates: doping effects10.1016/S0022-0248(98)01365-7 ↗
31. Phonon dispersion and Raman scattering in hexagonal GaN and AlN10.1103/PhysRevB.58.12899 ↗
32. Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si (111) by metal-organic chemical-vapor deposition
33. Strain-related phenomena in GaN thin films10.1103/PhysRevB.54.17745 ↗
34. Anisotropy of the solid-state epitaxy of silicon carbide in silicon10.1134/S1063782613120129 ↗
35. Selective etching of GaN polar surface in potassium hydroxide solution studied by X-ray photoelectron spectroscopy10.1063/1.1402966 ↗
36. The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si (111)-4° layer and Cs/SiC/Si (111)-4° interface10.1134/S1063782616100080 ↗