Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors

Abstract The development of low cost industrial processes is one of the key issues to make Cu(In,Ga)Se 2 based solar cells reach grid-parity. Such a process is found by using a two-step technology based on the sequential electro-deposition of a metallic precursor followed by a rapid annealing. Three types of metallic precursors (two-compound systems as copper–indium, copper–gallium and three-compound system as copper–indium–gallium) have been electrodeposited on a molybdenum sputtered soda lime glass and alloyed through a low annealing temperature. Then a selenium film has been evaporated and the stack has been annealed at high temperature in a rapid thermal processing furnace. A one-step heating profile has been used from room temperature to 550 °C in less than 1 min. Samples for which the heating was stopped after different annealing times have been characterized using several techniques: X-ray fluorescence spectrometry for elemental composition, X-ray diffraction and Raman spectroscopy for phase composition, scanning electron microscopy for structural analysis and glow discharge optical emission spectroscopy for diffusion study. Preferential formation reactions of the two-compound based metallic precursors have been studied and compared with the copper–indium–gallium metallic precursor used in a two step process. A gallium free system reacts faster than a gallium-based system and presents well-formed ternary compound after a standard selenization. However, the incorporation of gallium can be improved through a longer annealing time or a higher annealing temperature.