Preparation and characterization of GeSx thin-films for resistive switching memories

Abstract Metal–electrolyte–metal-structures with germanium sulphide (GeS x ) as ion conducting solid are one of the most promising candidates for application in a fast and high density resistive switching memory. We report on the preparation of 40 nm to 500 nm thin films of GeS x by radio-frequency sputtering and their suitability for integration into next generation memory applications. The influence of the deposition parameters on key morphological and chemical properties of the films was thoroughly studied. We found that the films' stoichiometry can be precisely controlled and tuned by variation of the deposition parameters. The comparative electrical characterization demonstrated the suitability of sputtered GeS x for integration in resistively switching memory cells with high reproducibility and reliable memory operation.