article·2019-04-26

Synthesis and characterisation of MoS2 thin films by electron beam evaporation

Siddhartha Dam, Abhishek Thakur, G. Amarendra, Shamima Hussain

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Abstract

Abstract Thin films of MoS2 were deposited on glass substrates by electron beam evaporation. The films were characterized by Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive X-ray Spectroscopy (EDS), Raman, optical spectroscopy and X-ray Photoelectron Spectroscopy (XPS). FESEM and EDS showed the formation of MoS2 nano-particles of sizes around ~10 nm. Raman spectra showed the formation of 2-H MoS2 with trace amounts of Mo-oxides. Optical band-gap was calculated to be ~2.13 eV. XPS studies were performed to evaluate the different oxidation states of Mo and S present in the films. Surface oxidation and elemental composition as a function of depth was studied using Angle-Resolved X-ray Photoelectron Spectroscopy.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials

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