Synthesis of Cu(In,Ga)Se2 absorber using one-step electrodeposition of Cu–In–Ga precursor

Abstract One-step Cu–In–Ga electrodeposition on Mo substrate is carried out by potentiostatic method in acidic aqueous media. The applied potential, the pH and the nature of the electrolyte are determined to obtain adequate precursor composition. The electrodeposit is found highly dendritic, due to Cu diffusion-controlled deposition. Selenization at temperatures ranging from 450 to 600 °C leads to Cu(In,Ga)Se 2 (CIGS) absorber. The influence of selenization temperature and duration on Ga distribution as well as on CIGS crystallinity is discussed. Although the precursor is dendritic, relatively compact absorbers can be obtained. The best solar cell, achieved on 0.1 cm 2 , shows 9.3% efficiency (V oc 456 mV; j sc 33 mA cm −2 ; FF 62%).