Influences of deposition temperature on characteristics of B-doped ZnO films deposited by metal–organic chemical vapor deposition

Abstract Boron-doped zinc oxide films were fabricated by metal–organic chemical vapor deposition at deposition temperatures (Td) from 150 to 210 °C. The deposition rate increases abruptly and monotonically with increasing Td. The resistivity also varies drastically, and a minimum resistivity of 1.6 × 10− 3Ω cm is obtained at Td = 175 °C. The crystal orientation and surface texture show Td dependence. These characteristics correlate with each other. The dependence of these characteristics on Td is caused by the reactivity of the source materials.