Preparation and characterization of nanocrystalline tin oxide thin films deposited at room temperature

Abstract SnO 2 nanocrystalline thin films were deposited onto glass substrates by a Modified Successive Ionic Layer Adsorption and Reaction technique at room temperature. The deposition parameters were optimized and the films were annealed in oxygen atmosphere (500 °C, 1 h). The obtained (as-deposited and annealed) thin films were characterized for structural, optical and electrical properties. X-ray diffraction patterns revealed that the films were either nanocrystalline and/or amorphous in nature with cassiterite tetragonal structure. Atomic force microscopy studies showed uniform grain distribution with average grain size found to be increased from 86 nm for as-deposited to 94 nm for the annealed samples. Optical band gap (3.62 eV) for as-deposited samples was decreased to 3.51 eV after annealing. A decrease in photoluminescence intensity was observed after annealing. Schottky junction of SnO 2 with silver has been made and barrier height (0.51 eV) was determined using current–voltage characteristics. The junction gave good response on illuminating it with 150 mW cm − 2 light intensity.