A laser based process for the formation of a local back surface field for n-type silicon solar cells

We report on the development of a laser doping process for the formation of a local back surface field (LBSF) for n-type silicon solar cells. Local point contacts are formed by applying a laser process to a doped, passivating layer of amorphous silicon carbide (PassDop layer). The exposure to laser radiation results in local doping and opening of the passivation layer at the same time. By variation of the laser parameters and the dopant content in the layer, strength and depth of the doping can be controlled. Both parameters are varied and the formation of a LBSF structure on lifetime samples is investigated. High dopant content in the passivation layer and comparably low laser fluencies yield the best electrical results, evidencing the formation of an effective LBSF in combination with a restricted laser induced damage in the silicon crystal.