Optical and structural properties of PbSIn3+ nanocrystals grown by chemical bath
Source abstract
Abstract
Abstract Herein, the growth of PbS doped systematically with solutions containing In 3 + ions by using chemical bath as a green approach is reported, with the aim of studying the effects of such In 3 + -doping on the morphological, structural and some optical properties of the PbS thin films obtained. The morphological changes of the films were followed by Atomic Force Microscopy and Scanning Electron Microscopy. X-ray diffraction studies showed growth in all films of the zinc blende phase. The grain size was found to be ~ 32 nm and ~ 24–14 nm for the undoped and doped samples, respectively. The absorbance results in doped films showed excitonic peaks at ~ 1.6 eV, ~ 1.8 eV, ~ 2.2 eV, owing to higher energy transitions from 1 D h → 1 De, 2 S h → 2 S h and 2 P h → 2 P e , states, respectively. By optical absorption, a shift for the band gap energy was observed from ~ 1.45 eV to ~ 2.18–2.3 eV range for the undoped and doped films, respectively. Gibbs energy calculation for the In 3 + doping PbS process was also examined.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.