Oxygen ion drifted bipolar resistive switching behaviors in TiO2–Al electrode interfaces

Abstract The rutile TiO 2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO 2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO 2 /Pt and Al/TiO 2 /Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al–TiO 2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlO x layer due to redox reaction at Al–TiO 2 layer interfaces.