article·2014-04-05

Composition variations in Cu2ZnSnSe4 thin films analyzed by X-ray diffraction, energy dispersive X-ray spectroscopy, particle induced X-ray emission, photoluminescence, and Raman spectroscopy

Dahyun Nam, Anatoliy Opanasyuk, P. V. Koval, A.G. Ponomarev, Ah Reum Jeong, Gee Yeong Kim, William Jo, Hyeonsik Cheong

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Abstract

Abstract Compositional and structural studies of Cu 2 ZnSnSe 4 (CZTSe) thin films were carried out by X-ray diffraction, energy dispersive X-ray spectroscopy (EDS), particle induced X-ray emission (PIXE), photoluminescence, and Raman spectroscopy. CZTSe thin films with different compositions were deposited on sodalime glass by co-evaporation. The composition of the films measured by two different methods, EDS and PIXE, showed significant differences. Generally, the Zn/Sn ratio measured by EDS is larger than that measured by PIXE. Both the micro-PIXE and the micro-Raman imaging results indicated the compositional and structural inhomogeneity of the sample.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

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