article·1996-05-01

Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition

Gabriel Ferro, Y. Monteil, H. Vincent, François Cauwet, J. Bouix, P. Durupt, J. Olivier, R. Bisaro

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OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Thin-Film Transistor Technologies

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