Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications
Source abstract
Abstract
Abstract Polycrystalline BaSi2 films were prepared by means of radio-frequency magnetron sputtering using a BaSi2 target and by post-annealing at 500 °C and above in ultrahigh vacuum. Striped Al electrodes spaced at 1.5 mm were evaporated on the surface. Photocurrents were clearly observed for photon energies greater than approximately 1.25 eV under bias voltages applied between the electrodes. The photoresponsivity increased with bias voltage Vbias and reached approximately 5 mA/W at 1.5 eV when Vbias = 2.0 V.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Silicon Nanostructures and Photoluminescence
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