CuInS2 thin films deposited by sol–gel spin-coating method

Abstract CuInS 2 thin films were prepared using a sol–gel spin-coating method. Copper acetate monohydrate (Cu(CH 3 COO) 2 ·H 2 O) and indium acetate (In(CH 3 COO) 3 ) were dissolved into 2-propanol and 1-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 1500 rpm, and dried at 300 °C for Cu–In as-grown films. The as-grown films were sulfurized inside a graphite container box. A clear chalcopyrite phase was observed without a secondary phase. Surface roughness of the films sulfurized at 500 °C was 19.1 nm. A Raman spectra measurement confirmed that no Cu–S or In–S compounds were created in the thin films.