Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering

Abstract Cu x O thin films have been deposited by reactive radio frequency magnetron sputtering at different target powers P tar (140–190 W) by fixing other process parameters: oxygen mass flow, argon mass flow and substrate temperature. Follow-up characterization (structural, electrical and optical) results reveal that the target power has a strong influence on both composition and functional properties of the resulting Cu x O films and particularly, the films tend to enter a Cu-rich phase by increasing the target power. Furthermore, the films prepared at the highest power (190 W) exhibit single phase Cu 2 O and demonstrate superior electrical properties and high growth rate.