Improving the electrical and optical properties of DC-sputtered ZnO:Al by thermal post deposition treatments

Abstract Thermal post deposition treatments are applied to DC-sputtered aluminum-doped zinc oxide (ZnO:Al) films and lead to a significant improvement of the electrical properties. Protective layers of amorphous silicon are used to protect the films from degradation during the high temperature treatment. Annealing for 6 hours at 500 °C leads to a carrier mobility of 48 cm 2 /Vs at a carrier concentration of 5.5 · 10 20 cm − 3 . Furthermore, improvements in the optical as well as in the electrical properties are possible at the same time compared to the as-deposited film. This is achieved by carrying out two thermal treatments to the ZnO:Al film, one prior to the capping with the protective layer and one afterwards. A series of samples with different carrier concentrations allows us to draw conclusions on the specific electrical transport properties.