article·2003-04-30

Properties of sputtered ZnO films and its interfaces with CdS

F. Säuberlich, J. Fritsche, Ralf Hunger, Andreas Klein

Publisher page

Abstract

The surfaces of sputtered zinc oxide (ZnO) films and its interfaces with CdS are investigated with X-ray photoelectron spectroscopy and soft X-ray photoelectron spectroscopy measured at the synchrotron radiation facility BESSY II. Cadmium sulfide (CdS) films are prepared by thermal evaporation from the compound and the zinc oxide films by DC magnetron sputtering from an undoped zinc oxide target at low power densities with and without addition of oxygen to the sputtering gas. ZnO films deposited at room temperatures show an additional oxygen component located at the surface that can be mostly removed by heat treatment. The electronic interface properties are studied in dependence to ZnO deposition conditions.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · ZnO doping and properties · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.