Study of plasma enhanced chemical vapor deposition of ZnO films by non-thermal plasma jet at atmospheric pressure

Plasma enhanced chemical vapor deposition using a non-thermal plasma jet was applied to deposition of ZnO films. Using vaporized bis(octane-2, 4-dionato)zinc flow crossed by the plasma jet, the deposition rate was as high as several tens of nm/s. From the results of infrared spectra, the films deposited at the substrate temperature Tsub = 100 °C contained a significant amount of carbon residue, while the films prepared at Tsub = 250 °C showed less carbon fraction. The experimental results confirmed that the plasma jet decomposed bis(octane-2, 4-dionato)zinc in the gaseous phase and on the substrate, and that there should be the critical Tsub to form high-quality ZnO films in the range from 100 to 250 °C.