Formation and transformation of ZnTiO3 prepared by sputtering process
Source abstract
Abstract
Abstract Zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering at substrate temperatures ranging from 30 to 400 °C. Subsequent annealing of the as-deposited films was performed at temperatures ranging from 600 to 900 °C. It was found that all as-deposited films were amorphous, as confirmed by XRD. This was further confirmed by the onset of crystallization that took place at annealing temperatures 600 °C. The phase transformation for the as-deposited films and annealed films were investigated in this study. The results revealed that pure ZnTiO3 (hexagonal phase) can exist, and was obtained at temperatures between 700 and 800 °C. However, it was found that decomposition from hexagonal ZnTiO3 to cubic Zn2TiO4 and rutile TiO2 took place with a further increase in temperature to 900 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.