article·2010-05-22

Formation and transformation of ZnTiO3 prepared by sputtering process

Ying-Chieh Lee, Yen-Lin Huang, Wen-His Lee, Fuh‐Sheng Shieu

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Abstract

Abstract Zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering at substrate temperatures ranging from 30 to 400 °C. Subsequent annealing of the as-deposited films was performed at temperatures ranging from 600 to 900 °C. It was found that all as-deposited films were amorphous, as confirmed by XRD. This was further confirmed by the onset of crystallization that took place at annealing temperatures 600 °C. The phase transformation for the as-deposited films and annealed films were investigated in this study. The results revealed that pure ZnTiO3 (hexagonal phase) can exist, and was obtained at temperatures between 700 and 800 °C. However, it was found that decomposition from hexagonal ZnTiO3 to cubic Zn2TiO4 and rutile TiO2 took place with a further increase in temperature to 900 °C.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials · Advanced ceramic materials synthesis

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