Potential efficiency improvement of Cu (In, Ga) Se2 thin-film solar cells by the window layer optimization
Source abstract
Abstract
Abstract In this paper, an initial model based on a CIGS experimental device has been established. Afterwards, the conventional i-ZnO layer replaced by ZnO1-xSx or Zn1-yMgyO layers as window layer and the solar cell performance analyzed. The estimated optical bandgap (Eg) of Zn1-yMgyO material is linearly enhanced from 3.3 eV for pure ZnO to 4.1 eV for Zn0.6Mg0.4O. Also, Eg for ZnO1-xSx material is variable between 2.83 eV–3.76 eV that is wider than pure ZnO. The AlZnO/ZnO1-xSx/CdS/CIGS structure when 0.4
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · ZnO doping and properties
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