Infrared absorption in a-SiC:H alloy prepared by d.c. sputtering

Abstract Infrared absorption and hydrogen effusion were measured on silicon rich a-SiC:H films deposited by d.c. sputtering. Hydrogen concentration was changed by hydrogen implantation. The results show that the shift of the SiH stretching absorption from 2000 to 2100 cm−1 with increasing carbon concentration is mainly due to hydrogen-related void formation. The absorption strength of SiH stretching and wagging absorptions are found to be independent of carbon concentration. The data suggest that both 720 and 780 cm−1 absorptions are due to CSi stretching vibrations with the 720 cm−1 absorption presumably related to HSiC groups. Under the deposition condition applied, these HSiC groups are the predominant sites for hydrogen and carbon incorporation.