article·2006-05-03

An infrared study of the surface chemistry of titanium nitride atomic layer deposition on silica from TiCl4 and NH3

Mark Q. Snyder, Benjamin A. McCool, Joseph DiCarlo, Carl P. Tripp, William J. DeSisto

Publisher page

Abstract

Abstract The initial stages of titanium nitride atomic layer deposition using sequential additions of TiCl 4 and NH 3 on fumed silica powder were investigated using in situ Fourier transform infrared spectroscopy techniques. After the first stage, the primary active surface species for the formation of TiN were determined to be TiCl x and Ti 2 NH. After six complete atomic layer deposition cycles the infrared spectrum indicated a strong TiN band that was verified by diffuse reflectance infrared spectroscopy recorded on pure TiN powder. Incomplete surface reactions were also observed.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Semiconductor materials and devices · Metal and Thin Film Mechanics · Copper Interconnects and Reliability

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.