Characterization of Cl-doped n-type Cu2O prepared by electrodeposition

Abstract N-type doping of cuprous oxide (Cu 2 O) films by chlorine (Cl) during electrodeposition was reported by the authors recently. A more detailed study on the effects of doping conditions on electrical properties of Cl-doped Cu 2 O is presented in this paper. The resistivity of Cl-doped Cu 2 O is affected by doping conditions, including Cu and Cl concentrations, different Cu and Cl precursors, complexing agent concentration, solution pH, and deposition temperature. It is believed that these conditions control the amount of Cl incorporated into the Cu 2 O films, thus the doping level. The lowest resistivity obtained so far is 7 Ω-cm, suitable for solar cell applications. Photocurrent-potential measurements verify the n-type conductivity of Cl-doped Cu 2 O. Scanning electron microscopy indicates a small grain size of around 100 nm in Cl-doped Cu 2 O. X-ray diffraction confirms Cu 2 O as the only detectable phase in the film.