Chemical states of carbon in amorphous boron carbide thin films deposited by radio frequency magnetron sputtering

Abstract Boron carbide thin films were deposited by radio frequency (RF) magnetron sputtering and characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high resolution transmission electron microscopy. The results reveal that the structure of thin films deposited at substrate temperatures lower than 350 °C is amorphous. We found that there are four chemical states for carbon in amorphous boron carbide thin films deposited by RF magnetron sputtering. One is the segregated carbon in form of the graphitic inclusions in the thin film identified by Raman spectroscopy and Raman mapping using two strong peaks at ~ 1360 cm − 1 and ~ 1590 cm − 1 , but the XPS results show that the graphitic inclusions do not connect to the substrate directly. On the surface the carbon forms C=O bonds characterized by the peak of C1s core level at 285.0 eV besides B–C bonds in the boron carbide with the peak of C1s being at 282.8 eV. The detailed analysis of B–C bonds in the boron carbide shows that there are two states for carbon atoms in B–C bonds: in the C–B–C models with C1s peak at 282.3 eV and in the icosahedra with C1s peak at 283.3 eV.