Raman spectroscopy analysis of magnetron sputtered RuO2 thin films

Ruthenium dioxide films have been prepared by reactive r.f. magnetron sputtering at different oxygen partial pressures, different total sputtering pressures and different substrate temperatures (RT-500 °C). Raman measurements have been done for all the films. The three major Raman features, namely the E g , A 1g and B 2g modes can be observed in these films. The films prepared at high oxygen partial pressure and low total pressure show weak A 1g peak intensity. The films prepared at low temperature show high B 2g peak intensity. As the temperature is increased, the intensity of the Eg Raman peak increases. This indicates a variation of the structure. By fitting the Raman peak, it has been found that the peak position of the RuO 2 films has a red shift compared to that of the single crystal RuO 2 . This peak shift may be related with the residual stress in the films. In this work, these phenomena have been discussed.