article·2003-04-30

Preparation of chalcopyrite-type CuInSe2 by non-heating process

Takahiro Wada, H. Kinoshita, S. Kawata

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Abstract

Chalcopyrite-type CuInSe 2 was successfully prepared by using mechanical alloying (MA) method. Various process parameters such as reaction system, rotational speed and milling period were investigated in detail. The determined best condition for the preparation of CuInSe 2 was that the reaction system was Cu+ In +2Se → CuInSe 2 , the rotational speed was 250 rpm and the milling period was 60 min. In the X-ray diffraction pattern of the CuInSe 2 sample prepared by the MA, characteristic peaks of the chalcopyrite-type structure such as 101, 21 1 and 3 1 1 were clearly observed. The determined lattice parameters were a= 5.7759(1) A and c = 11.5950(1) A (c/a = 2.007). The crystallographic structure of the CuInSe 2 sample was analyzed by Rietveld analysis using X-ray powder diffraction data.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties

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