Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

Abstract The carrier concentrations and mobilities of impurity (Sb, In, Ga, Al, Ag, and Cu)-doped BaSi 2 films grown by molecular beam epitaxy on highly resistive n - or p -Si(111) substrates were measured at room temperature using the van der Pauw technique. Sb-, Ga- and Cu-doped BaSi 2 exhibited n -type conductivity, while In- Al- and Ag-doped BaSi 2 exhibited p -type conductivity. The temperature dependence of resistivity indicated that the carrier transport in Ga-, Al-, Ag-, and Cu-doped BaSi 2 is well explained by both Shklovskii–Efros-type and Mott-type variable range hopping conduction.