Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition
Source abstract
Abstract
Abstract Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900 °C. By varying the TEB exposure the film thickness can be controlled with
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Research context
OpenAlex topics: Semiconductor materials and devices · Boron and Carbon Nanomaterials Research · Diamond and Carbon-based Materials Research
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