Study on inverse spinel zinc stannate, Zn2SnO4, as transparent conductive films deposited by rf magnetron sputtering

Abstract Inverse spinel zinc stannate (Zn 2 SnO 4 , ZTO) films were deposited onto fused quartz glass substrates heated at 800 °C by rf magnetron sputtering using a ceramic ZTO target (Zn:Sn = 2:1). H 2 flow ratios [H 2 /(Ar + H 2 )] were controlled from 0 to 30% during the depositions. ZTO films deposited at 800 °C possessed a polycrystalline inverse spinel structure. The lowest resistivity of 1.1 × 10 − 2 Ω cm was obtained for a ZTO film deposited at 20% H 2 flow ratio. The transmittance of the ZTO film was approximately 80% in the visible region.