A single source approach to deposition of nickel sulfide thin films by LP-MOCVD

Compounds of the type Ni(S 2 CNRR') 2 , where RR'=Et 2 (1), MeEt (2), Me n Bu (3) and Me n Hex (4), have been synthesized and used as single-source precursors for the fabrication of binary nickel sulfide thin films via low-pressure metal-organic chemical vapour deposition. The phase of films deposited on glass substrates was found to be NiS 1.03 or a mixture of NiS 1.03 and NiS. The films have been characterised by X-ray powder diffraction, scanning electron microscopy, transition electron microscopy and energy dispersive analysis of X-rays.