Structural and electrical properties of InSe polycrystalline films and diode fabrication

Abstract Polycrystalline InSe diode structures, which have been known as a phase-change material, were studied for the first time where the current–voltage characteristics show high potential for data storage application. Highly oriented InSe films were prepared onto heated quartz substrates using the co-evaporation technique with 20% Se over pressure followed by 1 h annealing at the growth temperature. The films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. InSe films were found to grow in 3-dimension with a roughness of around 400 nm. Diode structures were fabricated for the first time using these InSe films with both Mo bottom and Pt top electrodes that show large change in the electrical characteristics upon fabrication procedures. Thick InSe films (800 nm) showed Schottky characteristics, yielding a barrier height of approximately 1.0 eV.