MD simulations of amorphous SiO2 thin film formation in reactive sputtering deposition processes

Abstract Silicon Dioxide (SiO 2 ) thin film deposition processes were studied with the use of classical Molecular Dynamics (MD) simulations combined with Monte Carlo (MC) simulations. The MC simulations are shown to efficiently emulate thermal relaxation processes during deposition. Dependence of deposited film properties on the incident kinetic energies is examined from the numerical simulations.