Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory

Abstract Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge 1 Cu 2 Te 3 compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge 1 Cu 2 Te 3 amorphous films showed a high crystallization temperature of about 250 °C. The Ge 1 Cu 2 Te 3 amorphous film showed an electrical resistance decrease of over 10 2 -fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge 1 Cu 2 Te 3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge 2 Sb 2 Te 5 memory devices. Therefore, the Ge 1 Cu 2 Te 3 compound is a promising phase change material for PCRAM application.