Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition
Source abstract
Abstract
Abstract Transparent p-type conductive Ni0.9Cu0.1O thin films were prepared by pulsed plasma deposition (PPD) method. The effects of substrate temperature and oxygen pressure on the structural, electrical and optical properties of the films were investigated respectively. The film deposited at room temperature exhibits the highest conductivity of 5.17 S cm−1, with an average transmittance of 60% in the visible region. A transparent p-Ni0.9Cu0.1O/n-In2O3:W (IWO) hetero-junction diode was fabricated exhibiting rectifying current–voltage characteristics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Transition Metal Oxide Nanomaterials
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