Structural analysis of indium sulphide thin films elaborated by chemical bath deposition

X-ray diffraction and scanning electron microscopy show that the crystalline state of indium sulphide thin films, elaborated by chemical bath deposition technique on various substrates, is strongly affected by deposition parameters (deposition time tD, pH solution and thioacetamide concentration), as well as by annealing treatment. We show that h-In2S3 thin films grown on glass substrate during tD=60 min, and annealed under nitrogen at 400 jC during 1 h are well crystallized according to the cubic structure with the preferential orientation (610). They have a good homogenity and crystallinity. D 2004 Elsevier B.V. All rights reserved.