ITO thin films deposited by advanced pulsed laser deposition

AbstractIndium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive andhomogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature(RT)–180 °C), pressure (1–6×10 −2 Torr), laser fluence (1–4 J/cm 2 ) and wavelength (266–355 nm) on the film properties. The deposition rate,roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness100–600 nm, roughness 5–10 nm) between RTand 180 °C on a large area (5×5 cm 2 ). The films have electrical resistivity of 8×10 −4 Ω cm at RT,5×10 −4 Ω cm at 180 °C and an optical transmission in the visible range, around 89%.© 2007 Elsevier B.V. All rights reserved. Keywords: Indium tin oxide; Pulsed laser deposition; Thin films 1. IntroductionITOisahighlydegeneratedn-typesemiconductor,withalowelectrical resistivity of 2×10 −4 Ω cm to 4×10