Large area electrodeposition of Cu(In,Ga)Se 2
Source abstract
Abstract
Abstract The feasibility of large area electrodeposition of copper indium diselenide (CIS) for solar cell applications is investigated. CIS is deposited onto 80 cm 2 of ITO/In 2 Se 3 and Mo substrates. The uniformity of the properties of the deposits is investigated by optical transmission and photocurrent spectra. Results for a cadmium free superstrate cell with a ITO/In 2 Se 3 /CIS/Au structure are presented, in which the buffer layer and the absorber layer were successively electrodeposited. The maximum selenisation temperature must be limited to 325°C to avoid pn-junction destruction which is probably caused by interdiffusion processes. The best substrate cell with a Mo/CIS/CdS/ZnO structure yielded a preliminary efficiency of 4.8%.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.