Thin films of In2O3 by atomic layer deposition using In(acac)3

Abstract Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In(acac)3 (acac = acetylacetonate, pentane-2,4-dione) and either H2O or O3 as precursors. Successful growth using In(acac)3 is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165–200 °C for In(acac)3 and H2O, 165–225 °C for In(acac)3 and O3. The growth rates obtained are of the order 20 pm/cycle for In(acac)3 and H2O, 12 pm/cycle for In(acac)3.