Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters
Source abstract
Abstract
Abstract Ga doped ZnO (GZO) thin films were prepared by rf-magnetron sputtering on glass substrate for window heater applications. Electrical and optical properties of these films were analyzed in order to investigate on substrate temperature and rf power dependencies. High quality GZO films with a resistivity of 1.30 × 10 − 4 Ω cm and a transparency above 90% in the visible range were able to be formed. GZO films have been patterned on glass substrate as a line heater. This GZO line heater showed the rapid heat radiation property from room temperature to 90 °C for 22 s at the applied voltage of 42 V. These results could provide a possibility to use GZO as effective transparent heaters.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · GaN-based semiconductor devices and materials
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