Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells

Abstract ZnO thin films doped with either In or Al were electrodeposited potentiostatically at 80 °C from aqueous solutions containing Zn(NO 3 ) 2 and either InCl 3 or Al(NO 3 ) 3 . The films were used for the preparation of pn-junctions based on electrodeposited CuInSe 2 thin films. The pn-junctions were prepared both with and without the chemical bath deposited CdS interlayer, thus demonstrating the possibility to make all-electrodeposited pn-junctions for CuInSe 2 thin film solar cells.