A chemical method for the deposition of Bi2S3 thin films from a non-aqueous bath
Source abstract
Abstract
A room temperature chemical method is developed to deposit semiconducting bismuth trisulphide thin films on glass substrates. The method is based on a non-aqueous bath containing bismuth nitrate and thioacetamide. The deposited films are characterized by X-ray diffraction, optical absorption, electrical resistivity and IR spectroscopy techniques. The effect of annealing on the structural, optical and electrical properties is studied.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Electronic and Structural Properties of Oxides
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