The properties of TiN thin films deposited by pulsed direct current magnetron sputtering

Abstract This work investigated the effect of sputtering pressure on the properties of titanium nitride films deposited by pulsed dc (direct current) magnetron sputtering. The pulse frequency was 60 kHz, and reverse time of pulse was 5 µs. The preferred-orientation of titanium nitride films transforms from (111) to (200) when the sputtering pressure decreases. At the same time, the deposition rate and hardness of films increase, while the resistivities of titanium nitride films decrease. Comparing with the continuous dc sputtering, the titanium nitride films prepared by pulsed dc process exhibit better properties. Although both pulsed and continuous dc sputtered films possess the same low resistivity 23 µΩ-cm under 0.75 Pa, the resistivities of pulsed dc films are relatively stable with respect to the variation of sputtering pressure. The pulsed dc films also exhibit higher hardness than continuous dc films.