Thermoelectric properties of the bismuth–antimony–telluride and the antimony–telluride films processed by electrodeposition for micro-device applications
Source abstract
Abstract
Abstract Thermoelectric properties of the electrodeposited bismuth–antimony–telluride (Bi–Sb–Te) and the antimony–telluride (Sb–Te) films were characterized. The electrodeposited Bi–Sb–Te films exhibited the Seebeck coefficients of 21–71 µV/K and a maximum power factor of 1.2 × 10 − 4 W/K 2 -m. The Sb–Te films electrodeposited at potentials of 10 mV–30 mV were amorphous with compositions close to the Sb 2 Te 3 stoichiometry. The electrodeposited Sb–Te films exhibited the Seebeck coefficients larger than 250 µV/K due to their noncrystallinity. The amorphous Sb–Te films of the stoichiometric composition exhibited a maximum power factor of 57 × 10 − 4 W/K 2 -m.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides
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