article·2009-02-09

Thermoelectric properties of the bismuth–antimony–telluride and the antimony–telluride films processed by electrodeposition for micro-device applications

Su-Kyum Lim, Minyoung Kim, Tae-Sung Oh

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Abstract

Abstract Thermoelectric properties of the electrodeposited bismuth–antimony–telluride (Bi–Sb–Te) and the antimony–telluride (Sb–Te) films were characterized. The electrodeposited Bi–Sb–Te films exhibited the Seebeck coefficients of 21–71 µV/K and a maximum power factor of 1.2 × 10 − 4 W/K 2 -m. The Sb–Te films electrodeposited at potentials of 10 mV–30 mV were amorphous with compositions close to the Sb 2 Te 3 stoichiometry. The electrodeposited Sb–Te films exhibited the Seebeck coefficients larger than 250 µV/K due to their noncrystallinity. The amorphous Sb–Te films of the stoichiometric composition exhibited a maximum power factor of 57 × 10 − 4 W/K 2 -m.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides

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