Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2

Abstract Sputter deposited Ta and TaN single layers of 10 nm thickness as well as graded TaN/Ta and Ta/TaN/Ta layer stacks that act as diffusion barriers for Cu metallization were investigated after annealing at temperatures between T an =300 and 700 °C. By means of glancing angle X-ray diffraction, glow discharge optical emission spectroscopy and transmission electron microscopy, results of microstructure and phase characterization were correlated with diffusion phenomena. For the pure Ta barrier, Ta diffusion through the Cu cap layer to the sample surface is observed at T an =500 °C, and the transformation of initially grown metastable β-Ta into the equilibrium α-Ta phase occurs at T an =600 °C. In contrast, a fcc TaN layer remains stable at least up to T an =700 °C. In the case of the graded layer stacks, first signs of N diffusion out of the TaN film into the adjacent Ta layers are observed after annealing at T an =300 °C, and formation of hexagonal Ta 2 N starts at T an =500 °C. Whereas in the course of thermal treatments for the threefold graded Ta/TaN/Ta barrier all TaN reacts with Ta to form Ta 2 N, some fcc TaN remains in the twofold graded TaN/Ta barrier.