article·2005-02-05

Studies of sputtered ZnTe films as interlayer for the CdTe thin film solar cell

Bettina Späth, J. Fritsche, F. Säuberlich, Andreas Klein, Wolfram Jaegermann

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Abstract

The electronic interface properties of magnetron-sputtered ZnTe with CdTe and ZnO:Al have been characterized using X-ray photoelectron spectroscopy (XPS). For the CdTe/ZnTe interface, a valence band offset of 0.1±0.05 eV has been found, which is in agreement to previous investigations of ZnTe films deposited by physical vapour deposition onto CdTe substrates. The ZnO:Al/ZnTe interface is of interest as tunnelling barrier in tandem solar cells. We have found a type II band alignment with a valence band offset of 2.37±0.1 eV corresponding to a conduction band offset of 1.34±0.1 eV, which should be almost ideal for tunnelling contacts.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials

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