High-mobility molybdenum doped indium oxide

Abstract The effects of molybdenum doping (0–12 at.%) on the optical and electrical properties of In 2 O 3 were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 °C and 400 °C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm 2 V − 1 s − 1 . The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Ω − 1 cm − 1 . The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6·10 20 cm − 3 at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters.