Electronic properties of semiconducting silicides: fundamentals and recent predictions
Source abstract
Abstract
Abstract This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca2Si and BaSi2, recently found RuSi2 phase, ternaries in Fe–Os–Si and Ru–Os–Si systems, β-FeSi2, Mg2Si and CrSi2 with stretched and compressed lattices as well as transport properties of β-FeSi2, ReSi1.75, Ru2Si3 are presented. Prospects for practical applications of semiconducting silicides are discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Intermetallics and Advanced Alloy Properties · Surface and Thin Film Phenomena
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