High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

Abstract In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm 2 /Vs. The films present a resistivity as low as 5 × 10 − 4 Ω cm with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices.