Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1−Mg O buffer layers

A baseline parameter set for electrical modelling of Cu(In,Ga)Se2 solar cells with compositionally graded absorber and CdS buffer layer is established. The cases with and without Fermi level pinning as well as with and without a surface defect layer are considered. Simulations with a defect layer are observed to give the best correspondence to measurements. Zn1 − xMgxO buffer layers are introduced and initial modelling of the light soaking behaviour is performed. Simulation results are compared with experimental data.